CMPA2735030
30 W; 2.7 - 3.5 GHz; 50 V; GaN MMIC Power Amplifier
The CMPA2735030 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
Product Specifications
- Part Number
- CMPA2735030
- Description
- 30 W; 2.7 - 3.5 GHz; 50 V; GaN MMIC Power Amplifier
- Min Frequency(MHz)
- 2700
- Max Frequency(MHz)
- 3500
- Peak Output Power(W)
- 30
- Gain(dB)
- 30
- Efficiency(%)
- 45
- Operating Voltage(V)
- 50
- Form
- Discrete Bare Die
- Package Category
- Die
Features
- Operation up to 50 V
- High Breakdown Voltage
- High Temperature Operation