CMPA2735075
75 W; 2.7 - 3.5 GHz; GaN MMIC Power Amplifier
The CMPA2735075 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved in a small-footprint. Available in die and a flange; screw-down package.
Product Specifications
- Part Number
- CMPA2735075
- Description
- 75 W; 2.7 - 3.5 GHz; GaN MMIC Power Amplifier
- Min Frequency(MHz)
- 2700
- Max Frequency(MHz)
- 3500
- Peak Output Power(W)
- 75
- Gain(dB)
- 29
- Efficiency(%)
- 61
- Operating Voltage(V)
- 28
- Form
- MMIC Bare Die
- Package Category
- Flange
Features
- 80 W Typical PSAT
- 28 V Operation
- High Breakdown Voltage
- High Temperature Operation