CMPA2738060
80 W; 2.7 - 3.8 GHz; GaN MMIC; Power Amplifier
The CMPA2738060 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC enables extremely wide bandwidths to be achieved in a small footprint screw-down package.
Product Specifications
- Part Number
- CMPA2738060
- Description
- 80 W; 2.7 - 3.8 GHz; GaN MMIC; Power Amplifier
- Min Frequency(MHz)
- 2700
- Max Frequency(MHz)
- 3800
- Peak Output Power(W)
- 80
- Gain(dB)
- 34
- Efficiency(%)
- 54
- Operating Voltage(V)
- 50
- Form
- Packaged MMIC
- Package Category
- Flange
Features
- 85 W Typical PSAT
- Operation up to 50 V
- High Breakdown Voltage
- High Temperature Operation