CMPA3135060S

3.1 - 3.5 GHz; 60 W; Packaged GaN MMIC Power Amplifier

The CMPA3135060S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. This MMIC power amplifier contains a two-stage reactively matched amplifier design approach; enabling high power and power added efficiency to be achieved in a 7mm x 7mm; surface mount (QFN package). The MMIC is designed for S-Band radar power amplifier applications.

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Product Specifications

Part Number
CMPA3135060S
Description
3.1 - 3.5 GHz; 60 W; Packaged GaN MMIC Power Amplifier
Min Frequency(MHz)
3100
Max Frequency(MHz)
3500
Peak Output Power(W)
75
Gain(dB)
20.0
Efficiency(%)
55
Operating Voltage(V)
50
Form
Packaged MMIC
Package Category
Plastic, Surface Mount
Technology
GaN-on-SiC

Features

  • 3.1 – 3.5 GHz Operation
  • 75 W Typical Output Power
  • 29 dB Power Gain
  • 50-ohm Matched for Ease of Use
  • Plastic Surface-Mount Package; 7×7 mm QFN

Technical Resources

Datasheet

Model Data (Sparameters)

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CMPA3135060S
MMIC, GaN HEMT, 3.1-3.5GHz, G50V3-1, 60W
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