CMPA3135060S
3.1 - 3.5 GHz; 60 W; Packaged GaN MMIC Power Amplifier
The CMPA3135060S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. This MMIC power amplifier contains a two-stage reactively matched amplifier design approach; enabling high power and power added efficiency to be achieved in a 7mm x 7mm; surface mount (QFN package). The MMIC is designed for S-Band radar power amplifier applications.
Product Specifications
- Part Number
- CMPA3135060S
- Description
- 3.1 - 3.5 GHz; 60 W; Packaged GaN MMIC Power Amplifier
- Min Frequency(MHz)
- 3100
- Max Frequency(MHz)
- 3500
- Peak Output Power(W)
- 75
- Gain(dB)
- 20
- Efficiency(%)
- 55
- Operating Voltage(V)
- 50
- Form
- Packaged MMIC
- Package Category
- Surface Mount
Features
- 75 W Typical Output Power
- 29 dB Power Gain
- 50-ohm Matched for Ease of Use
- Plastic Surface-Mount Package; 7�7 mm QFN