CMPA5259025
25 W; 5200 - 5900 MHz; 28 V; GaN MMIC for Radar Power Amplifiers
The CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency; high gain; and wide bandwidth capabilities; which makes CMPA5259025F ideal for 5.2 - 5.9 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Product Specifications
- Part Number
- CMPA5259025
- Description
- 25 W; 5200 - 5900 MHz; 28 V; GaN MMIC for Radar Power Amplifiers
- Min Frequency(MHz)
- 5200
- Max Frequency(MHz)
- 5900
- Peak Output Power(W)
- 40
- Gain(dB)
- 25
- Efficiency(%)
- 54
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Surface Mount
Features
- 50% Efficiency at PSAT
- Operation up to 28 V
- High Breakdown Voltage