CMPA601C025
25 W; 6.0 - 12.0 GHz; GaN MMIC; Power Amplifier
The CMPA601C025 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25-?m gate-length fabrication process. GaN on SiC has superior properties compared to silicon; gallium arsenide or GaN on Si; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si; GaAs; and GaN on Si transistors. This MMIC contains a reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
Product Specifications
- Part Number
- CMPA601C025
- Description
- 25 W; 6.0 - 12.0 GHz; GaN MMIC; Power Amplifier
- Min Frequency(MHz)
- 6000
- Max Frequency(MHz)
- 12000
- Peak Output Power(W)
- 25
- Gain(dB)
- 33
- Efficiency(%)
- 32
- Operating Voltage(V)
- 28
- Form
- Packaged MMIC
- Package Category
- Die
Features
- 40 W Typical PSAT
- Operation up to 28 V
- High Breakdown Voltage