DU28120T
RF Power MOSFET Transistor 120W, 2-175MHz, 28V
DMOS
Product Specifications
- Part Number
- DU28120T
- Description
- RF Power MOSFET Transistor 120W, 2-175MHz, 28V
- Min Frequency(MHz)
- 2
- Max Frequency(MHz)
- 175
- Bias Voltage(V)
- 28.0
- Pout(W)
- 120.00
- Gain(dB)
- 13.00
- Efficiency(%)
- 60
- Type
- DMOS
- Package
- Flange Ceramic Pkg
- Package Category
- Ceramic Flange Mount
Features
- N-Channel enhancement mode device
- Lower noise figure than bipolar devices
- High saturated output power
- Lower capacitances for broadband operation
- DMOS structure
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)