DU28200M
RF Power MOSFET Transistor 200W, 2-175MHz, 28V
DMOS
Product Specifications
- Part Number
- DU28200M
- Description
- RF Power MOSFET Transistor 200W, 2-175MHz, 28V
- Min Frequency(MHz)
- 2
- Max Frequency(MHz)
- 175
- Bias Voltage(V)
- 28.0
- Pout(W)
- 200.00
- Gain(dB)
- 13.00
- Efficiency(%)
- 55
- Type
- DMOS
- Package
- Flange Ceramic Pkg
- Package Category
- Ceramic Flange Mount
Features
- N-Channel Enhancement Mode Device
- Lower Noise Figure than Bipolar Devices
- High Saturate Output Power
- Lower Capacitances for Broadband Operation
- DMOS structure
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Transistor Mounting and Soldering
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)