GTRA184602FC-V1
High Power RF GaN on SiC HEMT; 460 W; 48 V; 1805 - 1880 MHz
The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermallyenhanced package with earless flange.
Product Specifications
- Part Number
- GTRA184602FC-V1
- Description
- High Power RF GaN on SiC HEMT; 460 W; 48 V; 1805 - 1880 MHz
- Min Frequency(NHz)
- 1805
- Max Frequency(MHz)
- 1880
- Gain(dB)
- 16
- Efficiency(%)
- 60
- Operating Voltage(V)
- 48
- Package Category
- Earless
Features
- Input matched
- Asymmetric Doherty design Main: P3dB = 170 W Typ
- Peak: P3dB = 350 W Typ
- Typical pulsed CW performance: 16 ?s pulse width; 10% duty cycle; 2140 MHz; 48 V; Doherty fixture Gain = 15 dB @ 49 dBm
- Efficiency = 60% @ 49 dBm
- Output power at P3dB = 490 W