GTRA262802FC
High Power RF GaN-on-SiC HEMT 250 W; 48 V; 2490 - 2690 MHz
The GTRA262802FC is a 250-watt (P3dB) GaN-on-SiC HEMT D-mode amplifier for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRA262802FC
- Description
- High Power RF GaN-on-SiC HEMT 250 W; 48 V; 2490 - 2690 MHz
- Min Frequency (MHz)
- 2490
- Max Frequency(MHz)
- 2690
- P3dB Output Power(W)
- 250
- Gain(dB)
- 14.0
- Efficiency(%)
- 54
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Typical pulsed CW performance: 2605 MHz; 48 V; 16 μs pulse width; 10% duty cycle
- Output power at P3dB 250 W
- Efficiency 62%
- Gain 14.4 dB
- Capable of handling 10:1 VSWR @48 V; 38 W (CW) output power
- Low thermal resistance
- Input matched
- Pb-free and RoHS compliant