GTRA362002FC-V1
High Power RF GaN-on-SiC HEMT 200 W; 48 V; 3400 - 3600 MHz
The GTRA362002FC is a 200-watt (P3dB) GaN-on-SiC HEMT D-mode amplifier designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRA362002FC-V1
- Description
- High Power RF GaN-on-SiC HEMT 200 W; 48 V; 3400 - 3600 MHz
- Min Frequency (MHz)
- 3300
- Max Frequency(MHz)
- 3900
- P3dB Output Power(W)
- 200
- Gain(dB)
- 13.5
- Efficiency(%)
- 42
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Asymmetrical Doherty design: Main P3dB 85 W Typ; Peak P3dB 115 W Typ
- Typical Pulsed CW performance; 3500 MHz; 48 V; combined outputs
- Output power at P3dB 200 W
- Efficiency 60%
- Gain 12.5 dB
- Capable of handling 10:1 VSWR @50 V; 30 W (CW) output power
- Low thermal resistance
- Pb-free and RoHS complian
- Input matched