GTRA374902FC-V1
High Power RF GaN on SiC HEMT 450 W; 48 V; 3600 - 3700 MHz
The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRA374902FC-V1
- Description
- High Power RF GaN on SiC HEMT 450 W; 48 V; 3600 - 3700 MHz
- Min Frequency(NHz)
- 3600
- Max Frequency(MHz)
- 3700
- Gain(dB)
- 12
- Efficiency(%)
- 38
- Operating Voltage(V)
- 48
- Package Category
- Earless
Features
- Asymmetrical Doherty design: Main P3dB 220 W Typ; Peak P3dB 300 W Typ
- Typical Pulsed CW performance; 3700 MHz; 48 V; 10% duty cycle
- Output power 450 W
- Efficiency 60%
- Gain 11.5 dB
- Capable of handling 10:1 VSWR @48 V; 63 W (WCDMA) output power
- Low thermal resistance
- Pb-free and RoHS complian