GTRB184402FC
High Power RF GaN-on-SiC HEMT 440 W, 48 V, 1805 - 1880 MHz
The GTRB184402FC is a 440-watt (P4dB) GaN-on-SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRB184402FC
- Description
- High Power RF GaN-on-SiC HEMT 440 W, 48 V, 1805 - 1880 MHz
- Min Frequency (MHz)
- 1805
- Max Frequency(MHz)
- 1880
- P3dB Output Power(W)
- 440
- Gain(dB)
- 16.7
- Efficiency(%)
- 56
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Typical Pulsed CW performance, 1880 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs Output power at P4dB = 440 W Efficiency at P4dB = 70.9%