GTRB186002FC-V1
High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1805 - 1880 MHz
The GTRB184402FC is a 440-watt (P4dB) GaN-on-SiC high HEMT D-mode amplifier designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRB186002FC-V1
- Description
- High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1805 - 1880 MHz
- Min Frequency (MHz)
- 1805
- Max Frequency(MHz)
- 1880
- P3dB Output Power(W)
- 500
- Gain(dB)
- 15.7
- Efficiency(%)
- 54
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Typical Pulsed CW performance, 1880 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs
- Output power at P3dB = 500 W
- Efficiency at P3dB = 68%
- Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
- Pb-free and RoHS compliant