GTRB266502FC

High Power RF GaN-on-SiC HEMT 630 W, 48 V, 2620 - 2690 MHz

 The GTRB266502FC is a 630 W (P3dB) GaN-on-SiC amplifier designed for use in multi-standard cellular power applications. It features high efficiency, and a thermally-enhanced package with earless flange. 

Product Specifications

Part Number
GTRB266502FC
Description
High Power RF GaN-on-SiC HEMT 630 W, 48 V, 2620 - 2690 MHz
Min Frequency (MHz)
2620
Max Frequency(MHz)
2690
P3dB Output Power(W)
630
Gain(dB)
14.0
Efficiency(%)
49
Operating Voltage(V)
48
Package Category
Earless
Form
Packaged Discrete Transistor
Technology
GaN-on-SiC

Features

  • Typical Pulsed CW performance, 2690 MHz, 48V, 10 μs pulse width, 10% duty cycle, combined outputs
  • Output power at P3dB = 630 W
  • Efficiency at P3dB = 67%

Technical Resources

Datasheet


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GTRB266502FC-V1
Amplifier,630W,48V,2620-2690MHz,GaN HEMT