GTRB267008FC-V1
High Power RF GaN on SiC HEMT 620 W, 48 V, 2496 - 2690 MHz
The GTRB267008FC is a 620-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in Doherty cellular power amplifier applications. It features high linearized efficiency across 2496 MHz to 2690 MHz operating frequency band and a thermally-enhanced packaged with earless flange.
Product Specifications
- Part Number
- GTRB267008FC-V1
- Description
- High Power RF GaN on SiC HEMT 620 W, 48 V, 2496 - 2690 MHz
- Min Frequency(NHz)
- 2515
- Max Frequency(MHz)
- 2675
- Gain(dB)
- 15
- Efficiency(%)
- 52
- Operating Voltage(V)
- 48
- Package Category
- Earless
Features
- Typical Pulsed CW performance, 2690 MHz, 48 V, 10 ?s pulse width, 10% duty cycle, combined outputsOutput power at P3dB = 620 W
- Efficiency at P4dB = 72%
- High linerized efficiency
- Human Body Model Class 1C (per ANSI/ESDA/JEDEC JS-001)
- Pb-free and RoHS compliant