GTVA101K4
High Power RF GaN on SiC HEMT 1400 W; 50 V; 0.96 - 1.4 GHz
The GTVA101K4 is a GaN on SiC high electron mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities. This makes the GTVA101K4 ideal for applications in the 0.96 � 1.4 GHz frequency band. The transistor could be utilized for band-specific applications ranging from UHF through 1.4 GHz.
Product Specifications
- Part Number
- GTVA101K4
- Description
- High Power RF GaN on SiC HEMT 1400 W; 50 V; 0.96 - 1.4 GHz
- Min Frequency(MHz)
- 960
- Max Frequency(MHz)
- 1400
- Peak Output Power(W)
- 1400
- Gain(dB)
- 17
- Efficiency(%)
- 68
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Bolt Down
Features
- Typical Pulsed CW performance; 960 � 1215 MHz; 50 V; single side; 128 ?s pulse width; 10% duty cycle; Output power at P3dB = 1400 W; Efficiency = 68%; Gain = 17 dB
- Pb-free and RoHS compliant