GTVA12600
High Power RF GaN on SiC HEMT; 600W; 50V; 1200MHz to 1400MHz
The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the 1200 to 1400 MHz frequecy band. They feature input matching; high efficiency; and thermally-enhanced packages.
Product Specifications
- Part Number
- GTVA12600
- Description
- High Power RF GaN on SiC HEMT; 600W; 50V; 1200MHz to 1400MHz
- Min Frequency(MHz)
- 1200
- Max Frequency(MHz)
- 1400
- Peak Output Power(W)
- 600
- Gain(dB)
- 20.0
- Efficiency(%)
- 63
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Earless, Bolt Down
- Technology
- GaN-on-SiC
Features
- Typical pulsed CW performance (class AB); 1200 MHz; 50 V; 300 ?s pulse width; 10% duty cycle; Output power (P3dB) = 600 W; Drain efficiency = 65%; Gain = 18 dB
- Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300 ?s pulse width; 10% duty cycle; VDD = 50 V; IDQ = 100 mA
- Human Body Model Class 1C (per AnSI/ESDA/JEDEC JS-001)
- Pb-free and RoHS compliant