GTVA212701FA-V2
High Power RF GaN on SiC HEMT 270 W; 48 V; 2110 - 2200 MHz
The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It features input matching; high efficiency; and a thermally-enhanced earless package.
Product Specifications
- Part Number
- GTVA212701FA-V2
- Description
- High Power RF GaN on SiC HEMT 270 W; 48 V; 2110 - 2200 MHz
- Min Frequency(NHz)
- 1800
- Max Frequency(MHz)
- 2200
- Gain(dB)
- 19
- Efficiency(%)
- 38
- Operating Voltage(V)
- 48
- Package Category
- Earless
Features
- Typical Pulsed CW performance; 2180 MHz; 48 V; 10% duty cycle
- Output power P3dB 300 W
- Efficiency 68.5%
- Gain 17.5 dB
- Capable of handling 10:1 VSWR @ 48 V; 56.2 W (WCDMA) output power
- Pb-free and RoHS compliant