GTVA212701FA-V2

High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2110 - 2200 MHz

The GTVA212701FA is a 270-watt GaN-on-SiC HEMT D-mode amplifier for use in the 2110 to 2200 MHz frequency band. It features input matching; high efficiency; and a thermally-enhanced earless package.

Product Specifications

Part Number
GTVA212701FA-V2
Description
High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2110 - 2200 MHz
Min Frequency (MHz)
1800
Max Frequency(MHz)
2200
P3dB Output Power(W)
300
Gain(dB)
19.0
Efficiency(%)
38
Operating Voltage(V)
48

Features

  • Typical Pulsed CW performance; 2180 MHz; 48 V; 10% duty cycle
  • Output power P3dB 300 W
  • Efficiency 68.5%
  • Gain 17.5 dB
  • Capable of handling 10:1 VSWR @ 48 V; 56.2 W (WCDMA) output power
  • Pb-free and RoHS compliant
  • Input matched

Technical Resources

Datasheet


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GTVA212701FA-V2
270W,48V,2110-2200MHz,GaN HEMT