GTVA261701FA-V1
High Power RF GaN on SiC HEMT 170 W; 50 V; 2.62 - 2.69 GHz
The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTVA261701FA-V1
- Description
- High Power RF GaN on SiC HEMT 170 W; 50 V; 2.62 - 2.69 GHz
- Min Frequency(NHz)
- 2300
- Max Frequency(MHz)
- 2700
- Gain(dB)
- 17
- Efficiency(%)
- 43
- Operating Voltage(V)
- 50
- Package Category
- Earless
Features
- Typical Pulsed CW performance; 2690 MHz; 48 V
- Output power P3dB 170 W
- Efficiency 75 %
- Gain 15 dB
- Capable of handling 10:1 VSWR @ 48 V; 40 W (CW) output power
- RoHS compliant