GTVA263202FC-V1
High Power RF GaN on SiC HEMT 340 W; 48 V; 2620 - 2690 MHz
The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally enhanced surface-mount package with earless flange.
Product Specifications
- Part Number
- GTVA263202FC-V1
- Description
- High Power RF GaN on SiC HEMT 340 W; 48 V; 2620 - 2690 MHz
- Min Frequency(NHz)
- 2300
- Max Frequency(MHz)
- 2700
- Gain(dB)
- 17
- Efficiency(%)
- 40
- Operating Voltage(V)
- 48
- Package Category
- Earless
Features
- Typical Pulsed CW performance; 2690 MHz; 48 V; combined outputs
- Output power P3dB 340 W
- Efficiency 70 %
- Gain 16 dB
- Capable of handling 10:1 VSWR @ 48 V; 80 W (CW) output power
- Pb-free and RoHS compliant