Octave Band, High Power “Quasi-Active”

The LM401102-Q-x-301 Silicon PIN Diode Limiter is a surface mount, quasi active two-stage power limiter which can operate over the frequency range of 400 to 1000 MHz. It is manufactured using MACOM's proven hybrid manufacturing process incorporating PIN diodes and passive devices integrated onto a ceramic substrate. These low profile, compact, (8 mm L x 5 mm W x 2.5 mm H) surface mount component offers outstanding small and large signal performance. The LM401102-Q-A-301 comprises “coarse stage” shunt PIN limiter diodes driven by a Schottky diode detector stage and a “clean-up stage” limiter PIN diode with an internal RF choke DC return. The LM401102-Q-B-301 comprises a DC block at its input, “coarse stage” shunt PIN limiter diodes driven by a Schottky diode detector stage and a “clean-up stage” limiter PIN diode with an internal RF choke DC return. The LM401102-Q-C-301 comprises a DC block at its input, shunt PIN limiter diodes driven by a Schottky diode detector stage, a “clean-up stage” limiter PIN diode with an internal RF choke DC return and a DC block at its output. The very low thermal resistance (15ºC/W, junction to bottom surface of package) of the PIN diodes in this device and the presence of a Schottky detector bias current source enables it to reliably handle RF incident power levels up to 50 dBm CW and RF peak incident power levels up to 60 dBm (25 µs pulse width, 5% duty cycle) at TCASE = 85 ºC. The I-layer thickness of the output stage and the design of the internal Schottky detector current source combine to produce flat leakage of 18 dBm typical and spike leakage energy of 0.5 ergs, typical. No external control signals are required