MA4AGFCP910

AlGaAS PIN Diode

MACOM's MA4AGP907 and MA4AGFCP910 are Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN diodes. These devices are fabricated on OMCVD epitaxial wafers using a process optimized for high device uniformity and exceptionally low parasitics. The end result is a diode with an extremely low RC product, (0.1ps) and 2-3nS switching characteristics. They are fully passivated with silicon nitride and have an added polymer layer for scratch protection. The protective coating prevents damage to the junction and the anode air-bridge during handling and assembly. The ultra low capacitance of the MA4AGP907 and MA4AGFCP910 make them ideal for RF switch and phase shifter applications through millimeter wave frequencies. The diodes are designed for use in pulsed or CW applications, where single digit nS switching speed is required. The low capacitance of these diodes make them ideal for use in microwave multi-throw switch assemblies, where the series capacitance of each “off” port adversely loads the input and affects VSWR.

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Product Specifications

Part Number
MA4AGFCP910
Description
AlGaAS PIN Diode
Breakdown Voltage, Minimum(V)
75
Resistance(Ohm)
5.20
Total Capacitance(pF)
0.020
CW Power Dissipation(W)
0.1
Min Frequency(MHz)
100
Max Frequency(MHz)
40000

Features

  • Low Series Resistance
  • RoHS Compliant
  • Polyimide Scratch Protection
  • Silicon Nitride Passivation
  • Can be Driven by a Buffered TTL
  • 2 Nanosecond Switching Speed
  • Millimeter Wave Switching & Cutoff Frequency
  • Ultra Low Capacitance

Technical Resources

Datasheet

Model Data (Sparameters)

Application Notes

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MA4AGFCP910
AlGaAs,Flip Chip,PIN,Diode
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