MA4AGSW3

AlGaAs Reflective

The MA4AGSW3 is an Aluminum-Gallium-Arsenide, single pole, triple throw (SP3T), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using MACOM’s patented heterojunction technology. This technology produces a switch with less loss than conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50GHz. These devices are fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage to the diode junction and anode air-bridges during handling and assembly. Off chip bias circuitry is required. The high electron mobility of AlGaAs and the low capacitance of the PIN diodes makes this switch ideal for fast switching, high frequency, multi-throw switch designs. These AlGaAs PIN switches are use in switching arrays for radar systems, radiometers, test equipment and other multi-assembly components.

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Product Specifications

Part Number
MA4AGSW3
Description
AlGaAs Reflective
Min Frequency(MHz)
50
Max Frequency(MHz)
50000
Insertion Loss (dB)
0.600
Isolation(dB)
48
IIP3(dBm)
40
CW Incident Power(W)
0

Features

  • Ultra Broad Bandwidth : 50 MHz to 50 GHz
  • RoHS Compliant*
  • 260°C Reflow Compatible
  • Polymer Scratch Protection
  • Silicon Nitride Passivation
  • M/ACOM’s unique AlGaAs Hetero-Jjunction Anode Technology
  • +10mA for Isolation state
  • -10mA for low loss state
  • Low Current consumption
  • 31 dB Isolation at 50 GHz
  • 0.8 dB Insertion Loss
  • Functional Bandwidth : 50 MHz to 70 GHz

Technical Resources

Datasheet

Model Data (Sparameters)

Application Notes

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MA4AGSW3
SP3T Reflective AlGaAs Switch
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