MA4P202-120

PIN Diode

MACOM's broad line of packaged PIN diodes encompass a comprehensive range of electrical characteristics and package outlines. This diverse union of semiconductor technology and chip packaging gives considerable flexibility to the circuit designer. The fast switching series of Packaged PIN Diodes utilize a thin I-region, silicon oxide or glass passivated chip which provides for low leakage current and low insertion loss. With the use of in process control monitors to regulate wafer fabrication parameters, these devices will achieve consistent performance in control circuit applications. The high voltage product line of Packaged PIN Diodes employs MACOM'S CERMACHIP® passivation process which provides for a hard glass encapsulation that hermetically seals and protects the active area of the chip. These packaged CERMACHIP® PIN diodes are ideally suited for use in high power applications where high level RF voltages are present. The diode chips are bonded into sealed ceramic packages that are designed for the most stringent electrical and environmental conditions. An extensive choice of package styles are available which may be used in a wide variety of RF microwave circuits. The Packaged PIN Diodes series are designed to have a high inherent reliability and may be ordered screened to meet many MIL-STD requirements.

Product Specifications

Part Number
MA4P202-120
Description
PIN Diode
Breakdown Voltage, Minimum(V)
100
Resistance(Ohm)
2.50
Total Capacitance(pF)
0.250
CW Power Dissipation(W)
0.3
Thermal Resistance(°C/W)
60.0
Min Frequency(MHz)
50
Max Frequency(MHz)
4000

Features

  • High Power
  • Assortment of Packages Styles
  • Wide Selection of Capacitances
  • Wide Selection of Carrier Lifetimes
  • Voltage Ratings to 1500 Volts
  • Fast Speed
  • Available Screened for Military Applications
  • RoHS* Compliant

Applications

  • ISM

Technical Resources

Datasheet


Order from MACOM

MA4P202-120
Diode,Pin,Ceramic_Pkg,Si