Si PIN Diode

The MA4PBL027 is a silicon beamlead PIN diode fabricated with MACOM's HMIC™ process. It features one silicon pedestal embedded in a low loss, low dispersion glass which supports the beam-leads. The diode is formed on the top of the pedestal, and airbridges connect the diode to the beam-leads. The topside is fully encapsulated with silicon nitride and also has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the diode junction and air-bridge during handling and assembly. The diodes exhibit low series resistance, low capacitance, and extremely fast switching speed. The ultra low capacitance, low RC product and low profile of the MA4PBL027 makes it an ideal choice for use in microwave and millimeter wave switch designs, where low insertion loss and high isolationare required. The low bias levels of +10 mA in the low loss state and 0v in the isolation state allows the use of a simple + 5V TTL gate driver. These diodes can be used as switching arrays on radar systems, high speed ECM circuits, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies.