MA4SW410B-1

HMIC PIN Diode with Bias

The MA4SW410B-1 device is a SP4T broadband switch with integrated bias network utilizing MACOM's HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy. The MA4SW410 is a high performance switch suitable for use in multi-band ECM, radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard ±5V, TTL controlled, PIN diode driver, 50nS switching speeds are achievable.

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Product Specifications

Part Number
MA4SW410B-1
Description
HMIC PIN Diode with Bias
Min Frequency(MHz)
2000
Max Frequency(MHz)
18000
Insertion Loss (dB)
0.800
Isolation(dB)
48
IIP3(dBm)
40
CW Incident Power(W)
2

Features

  • Broad Bandwidth
  • 50 nS Switching Speed
  • Up to +30dBm C.W. Power Handling @ +25°C
  • Glass Encapsulated Chip with Polymer Protective Coating
  • Rugged Fully Monolithic
  • Lower Insertion Loss and Higher Isolation than Comparable pHEMT or Discrete Component Designs ?
  • Usable from 50 MHz to 26.5 GHz
  • Specified from 50 MHz to 20 GHz

Technical Resources

Datasheet

Model Data (Sparameters)

Application Notes

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MA4SW410B-1
HMIC SP4T w/Bias Network
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Compatible Parts