MA4SW610B-1
Reflective PIN Diode
The MA4SW610B-1 is a reflective SP6T series shunt broad band switch with integrated bias networks made with MACOM’s HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC™ devices low loss and high isolation performance through 18 GHz. These high performance switches are suitable for the use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 80ns switching speeds are achieved.
Product Specifications
- Part Number
- MA4SW610B-1
- Description
- Reflective PIN Diode
- Min Frequency(MHz)
- 2000
- Max Frequency(MHz)
- 18000
- Insertion Loss (dB)
- 1.300
- Isolation(dB)
- 45
- IIP3(dBm)
- 40
- CW Incident Power(W)
- 2
Features
- Ultra Broad Bandwidth: 2GHz to 18GHz
- Reliable, Fully Monolithic, Glass Encapsulated Construction
- 1.9dB Insertion Loss, 35dB Isolation at 18GHz
Technical Resources
Datasheet
Model Data (Sparameters)
Application Notes
- S-Parameter S2P File Format Guide
- Known Good Die Delivery Specification
- Tape and Reel Packaging for Surface Mount Components
- Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
- Drivers for GaAs FET Switches and Digital Attenuators
- Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
- PIN Diodes for Microwave Switch Designs