MA4SW610B-1

Reflective PIN Diode

The MA4SW610B-1 is a reflective SP6T series shunt broad band switch with integrated bias networks made with MACOM’s HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC™ devices low loss and high isolation performance through 18 GHz. These high performance switches are suitable for the use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 80ns switching speeds are achieved.

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Product Specifications

Part Number
MA4SW610B-1
Description
Reflective PIN Diode
Min Frequency(MHz)
2000
Max Frequency(MHz)
18000
Insertion Loss (dB)
1.300
Isolation(dB)
45
IIP3(dBm)
40
CW Incident Power(W)
2
Package Category
Die/Bumped Die
Package
DIE

Features

  • Ultra Broad Bandwidth: 2GHz to 18GHz
  • Reliable, Fully Monolithic, Glass Encapsulated Construction
  • 1.9dB Insertion Loss, 35dB Isolation at 18GHz

Technical Resources

Datasheet

Model Data (Sparameters)

Application Notes

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MA4SW610B-1
HMIC SP6T PIN Switch with Bias Network
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MASW-006102-13610W
6T HMIC SWITCH W/BIAS NETWORK
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