MADP-011141-13160W

Pin Diode

 MACOM offers a comprehensive line of low capacitance, planar and mesa, silicon PIN diode chips which use ceramic glass and silicon nitride passivation technology. The silicon PIN chip series of devices cover a broad spectrum of performance requirements for control circuit applications. They are available in several choices of I-region lengths and have been optimally designed to minimize parametric trade offs when considering low capacitance, low series resistance, and high breakdown voltages. Their small size and low parasitics, make them an ideal choice for broadband, high frequency, micro-strip hybrid assemblies. The attenuator line of PIN diode chips are a planar or mesa construction and because of their thicker I-regions and predictable RS vs. I characteristics, they are well suited for low distortion attenuator and switch circuits. Incorporated in the chip’s construction is MACOM’s, time proven, hard glass, Cermachip process. The hard glass passivation completely encapsulates the entire PIN junction area resulting in a hermetically sealed chip which has been qualified in many military applications. These Cermachip diodes are available in a wide range of voltages, up to 3,000 volts, which are capable of controlling kilowatts of RF power. 

Product Specifications

Part Number
MADP-011141-13160W
Description
Pin Diode
Breakdown Voltage, Minimum(V)
1100
Resistance(Ohm)
0.70
Total Capacitance(pF)
0.400
Lifetime(ns)
6000
CW Power Dissipation(W)
15.0
Thermal Resistance(°C/W)
10.0
Min Frequency(MHz)
50
Max Frequency(MHz)
1800

Features

  • Switch & Attenuator Die
  • Extensive Selection of I-Region Lengths
  • Hermetic
  • Glass Passivated Cermachip
  • Oxide Passivated Planar Chips
  • Voltage Ratings to 3000 V
  • Fast Switching Speed
  • Low Loss
  • High Isolation
  • RoHS* Compliant

Order from MACOM

MADP-011141-13160W
Diode, PIN, Die