MADP-030015-13140P

Surmount PIN Diode

This device is a silicon, glass PIN diode surmount chip fabricated with MACOM’s patented HMIC™ process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical topology provides for exceptional heat transfer. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. These packageless devices are suitable for usage in moderate incident power, = 50dBm/C.W. or where the peak power is = 75dBm, pulse width is = 1µS, and duty cycle is = 0.01%. Their low parasitic inductance, 0.4 nH, and excellent RC constant, make these devices a superior choice for higher frequency switch elements when compared to their plastic package counterparts.

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Product Specifications

Part Number: MADP-030015-13140P
Description: Surmount PIN Diode
Breakdown Voltage, Minimum(V): 115
Resistance(Ohm): 0.50
Total Capacitance(pF): 0.780
CW Power Dissipation(W): 11.5
Thermal Resistance(°C/W): 13.0
Min Frequency(MHz): 1
Max Frequency(MHz): 6000

Features

0603 Outline
High Average and Peak Power Handling
Low Parasitic Capacitance and Inductance
Polymer Scratch Protection
Silicon Nitride Passivation
No Wirebonds Required
15µm I-Region Length Devices
Surface Mount

Applications

Aerospace and Defense
ISM

Technical Resources

Datasheet

MADP-0xx015-1314.pdf

Model Data (Sparameters)

MADP-030015_SPAR.ZIP

Application Notes

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MADP-030015-13140P

Diode,HMIC,PIN Surmount

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