MADP-042405-130600

Surmount PIN Diode

This device is a Silicon-Glass PIN diode chip fabricated with MACOM's patented HMICTM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical conic topology provides for exceptional heat transfer from the active area. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. These surmount devices are suitable for usage in moderate incident power (5W C.W.) or higher incident peak power (50W) series, shunt, or series-shunt switches. Lower parasitic inductance, 0.45nH, and excellent RC constant (0.23pS), make the devices ideal for higher frequency switch elements compared to their plastic device counterparts.

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Product Specifications

Part Number: MADP-042405-130600
Description: Surmount PIN Diode
Breakdown Voltage, Minimum(V): 80
Resistance(Ohm): 0.80
Total Capacitance(pF): 0.270
CW Power Dissipation(W): 1.3
Thermal Resistance(°C/W): 115.0
Min Frequency(MHz): 50
Max Frequency(MHz): 4000

Features

Surface Mount
RoHS Compliant
High Average and Peak Power Handling
Low Parasitic Capacitance and Inductance
Polymer Scratch Protection
Silicon Nitride Passivation
Rugged Silicon-Glass Construction
No Wirebonds Required

Applications

Aerospace and Defense
ISM

Technical Resources

Datasheet

MADP-042XX5.pdf

Model Data (Sparameters)

MADP-042405_SPAR.ZIP

Application Notes

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MADP-042405-130600

Diode,HMIC,PIN,Surmount,Vertical Via

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