MADS-002501-0002G0
SURMOUNT™ Low Barrier Silicon Schottky Diode
The MADS-002501-0002G0 SURMOUNT™ Schottky diode is a silicon low barrier device fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device.
Product Specifications
- Part Number
- MADS-002501-0002G0
- Description
- SURMOUNT™ Low Barrier Silicon Schottky Diode
- Vf(V)
- 0.3000
- Vb
- 5.00
- Total Capacitance(pF)
- 0.100
- Dynamic Resistance(ohms)
- 10.0
- Junction Capacitance(pF)
- 0.100
Features
- Extremely Low Parasitic Capacitance & Inductance.
- Dual Cut Die Footprint
- Surface Mountable in Microwave Circuits. No Wire bonds Required
- Rugged HMIC Construction with Polyimide Scratch Protection
- Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours)
- RoHS* Compliant