MAGB-104450-015B0P
GaN Amplifier 50 V, 15 W 4.4 - 5.0 GHz
The MAGB-104450-015B0P is a wideband GaN on Si HEMT D-mode transistor designed for cellular base station applications and optimized for 4.4 - 5.0 GHz modulated signal operation. This device supports pulsed and linear operation with peak output power levels to 15W (41.8 dBm) in a 6x3mm DFN package.
Product Specifications
- Part Number
- MAGB-104450-015B0P
- Description
- GaN Amplifier 50 V, 15 W 4.4 - 5.0 GHz
- Min Frequency(MHz)
- 4400
- Max Frequency(MHz)
- 5000
- Supply Voltage(V)
- 50
- PSAT(W)
- 15.0
- Gain(dB)
- 16.0
- Efficiency
- 51
- Package
- 6 x 3 mm DFN
Features
- Optimized for Cellular Base Station Applications
- Designed for Digital Predistortion Error Correction Systems
- High Terminal Impedances for Broadband Performance
- 50 V Operation
- 100% RF Tested
- RoHS* Compliant