MAGX-100027-002S0P
GaN Transistor 50 V, 2 W DC - 2.7 GHz
The MAGX-100027-002S0P is a GaN on Si HEMT D-mode transistor suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power levels to 2 W (33 dBm) in a plastic package.
The MAGX-100027-002S0P is ideally suited for military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR.
Product Specifications
- Part Number
- MAGX-100027-002S0P
- Description
- GaN Transistor 50 V, 2 W DC - 2.7 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 2700
- Supply Voltage(V)
- 50
- PSAT(W)
- 2.0
- Gain(dB)
- 18.7
- Efficiency
- 58.5
- Package
- 6 x 3 mm DFN
Features
- Suitable for Linear and Saturated Applications
- CW and Pulsed Operation: 2 W Output Power
- 260°C Reflow Compatible
- 50 V Operation
- 100% RF Tested
- RoHS* Compliant