MAPC-A2004-B

GaN Amplifier 50 V, 90 W

The MAPC-A2004-B is a high power GaN on Silicon Carbide HEMT D-mode amplifier designed for 5G base station applications and optimized for 3.3 - 3.8 GHz modulated signal operation. This device supports pulsed and linear operation with peak output power levels to 90 W (49.5 dBm) in an7.0 x 6.5 mm DFN package.

Data Sheet Get a Sample Order Now Get a Quote Tech Support Product Inquiry
  1. Home
  2. Products
  3. RF/Microwave & mmWave
  4. Amplifiers
  5. All Amplifiers
  6. MAPC-A2004-B

Product Specifications

Part Number
MAPC-A2004-B
Description
GaN Amplifier 50 V, 90 W
Min Frequency(MHz)
3300
Max Frequency(MHz)
3800
Supply Voltage(V)
50
PSAT Watt(W)
90.0
Gain(dB)
15.0
Test Freq(GHz)
3.60
PSAT(dBm)
50

Features

  • Optimized for Cellular Base Station Applications
  • Designed for Digital Predistortion Error Correction Systems
  • High Terminal Impedances for Broadband Performance
  • 50 V Operation
  • 100% RF Tested
  • RoHS* Compliant

Technical Resources

Datasheet

Order from MACOM

MAPC-A2004-BD000
Amplifier,3.3-3.8 GHz,GaN-SiC,DFN 7x6.5
Order Get a Quote Get a Sample
MAPC-A2004-BDSB1
Sample Board, MAPC-A2004-B
Order Get a Quote Get a Sample
MAPC-A2004-BDTR1
Amplifier,3.3-3.8GHz,GaN-SiC,7x6.5,T&R
Order Get a Quote Get a Sample

Compatible Parts