MAPC-A2503

GaN Amplifier 50 V, 60 W AVG

The MAPC-A2503 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for asymmetrical Doherty base station applications with 60W average power and optimized for 3.7 - 4.0 GHz modulated signal operation. The device supports pulsed, and linear operation with peak output power levels to 450W (56.5 dBm) in an air cavity ceramic package.

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Product Specifications

Part Number
MAPC-A2503
Description
GaN Amplifier 50 V, 60 W AVG
Min Frequency(MHz)
3700
Max Frequency(MHz)
4000
Supply Voltage(V)
50
PSAT Watt(W)
60.0
Gain(dB)
-2.0
Test Freq(GHz)
3.85
PSAT(dBm)
46

Features

  • MACOM PURE CARBIDE® Amplifier Series
  • Optimized for Cellular Base Station Applications
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Asymmetrical Doherty Application
  • High Terminal Impedances for Broadband Performance
  • 50 V Operation
  • 100% RF Tested
  • RoHS* Compliant

Technical Resources

Datasheet

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MAPC-A2503-AS000
Amplifier,450W,3.7-4.0GHz,AC-780SP-4
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MAPC-A2503-ASSB1
Sample Board, MAPC-A2503
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MAPC-A2503-ASTR1
Amplifier,450W,3.7-4.0GHz,AC-780SP-4,T&R
Order Get a Quote Get a Sample