MAPC-A2506
GaN Amplifier 50 V, 30 W AVG 3.7 - 4.0 GHz
The MAPC-A2506 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for asymmetrical Doherty base station applications with 30W average power and optimized for 3.7 - 4.0 GHz modulated signal operation. The device supports pulsed, and linear operation with peak output power levels to 220 W (53.4 dBm) in an air cavity ceramic package.
Product Specifications
- Part Number
- MAPC-A2506
- Description
- GaN Amplifier 50 V, 30 W AVG 3.7 - 4.0 GHz
- Min Frequency(MHz)
- 3700
- Max Frequency(MHz)
- 4000
- Supply Voltage(V)
- 50
- PSAT(W)
- 220.0
- Gain(dB)
- 12.5
- Efficiency
- 52.3
- Test Freq(GHz)
- 3.85
- Package
- AC-780S-4
- Package Category
- Ceramic
Features
- MACOM PURE CARBIDE® Amplifier Series
- Optimized for Cellular Base Station Applications
- Designed for Digital Predistortion Error Correction Systems
- Optimized for Asymmetrical Doherty Application
- High Terminal Impedances for Broadband Performance
- 50 V Operation
- 100% RF Tested
- RoHS* Compliant