MAPC-A2519

GaN Amplifier 50 V, 90 W AVG

The MAPC-A2519 is a high power GaN on silicon carbide HEMT D-mode amplifier suitable for asymmetrical Doherty applications with 85 W average power and optimized for 2.3 - 2.4 GHz modulated signal operation. The device supports pulsed, and linear operation with peak output power levels to 600 W (57.8 dBm) in an air cavity ceramic package.

Product Specifications

Part Number
MAPC-A2519
Description
GaN Amplifier 50 V, 90 W AVG
Min Frequency(MHz)
2300
Max Frequency(MHz)
2400
Supply Voltage(V)
50
PSAT Watt(W)
90.0
Gain(dB)
16.5
Test Freq(GHz)
2.35
PSAT(dBm)
50

Features

  • MACOM PURE CARBIDEĀ® Amplifier Series
  • Optimized for Modulated Signal Applications
  • Optimized for Asymmetrical Doherty Application
  • High Terminal Impedances for Broadband Performance
  • 50 V Operation
  • 100% RF Tested
  • RoHS* Compliant

Technical Resources

Datasheet


Order from MACOM

MAPC-A2519-AS000
Amplifier,600W,2.3-2.4GHz,AC-780SP-4
MAPC-A2519-ASSB1
Sample Board, MAPC-A2519
MAPC-A2519-ASTR1
Amplifier,600W,2.3-2.4GHz,AC-780SP-4,T&R