MAPC-C27600-CP
High Power RF GaN Amplifier, 600 W, 48 V, 2500 - 2700 MHz
The MAPC-C27600-CP is a GaN-on-Silicon Carbide HEMT Amplifier designed for asymmetrical Doherty applications. The device is optimized for the frequency band of 2500 to 2700 MHz. Product is housed in an over-molded TO-package.
Product Specifications
- Part Number
- MAPC-C27600-CP
- Description
- High Power RF GaN Amplifier, 600 W, 48 V, 2500 - 2700 MHz
- Min Frequency(MHz)
- 2500
- Max Frequency(MHz)
- 2700
- Supply Voltage(V)
- 48
- PSAT Watt(W)
- 600.0
- Gain(dB)
- 15.0
- PSAT(dBm)
- 49
Features
- GaN-on-SiC HEMT Technology
- Designed for Asymmetrical Doherty Application
- 49.3 dBm Average Output Power
- 600 W Peak Output Power
- Input & Output Pre-matched Device
- Low Thermal Resistance
- 100% DC & RF Tested
- RoHS* Compliant