MASW-001150-1316
HMIC PIN Diode,50W
A PIN diode series-shunt switch element with a unique integrated thermal terminal for dissipating heat in the series diode created by the DC and RF input power. The thermal terminal allows for optimum heat dissipation by providing a direct thermal connection between the series diode and the circuit heatsink while also being electrically isolated. The chip is designed to provide a heat transfer conduit that does not interfere with the PIN diode anode (input) and cathode (output) electrical terminals, especially with respect to RF performance. The chip is fabricated using MACOM's patented HMIC™ process and features silicon pedestals embedded in a low loss, low dispersion glass for low leakage current. The topside is fully encapsulated with silicon nitride and has an additional polymer layer to protect against damage during handling and assembly. This PIN diode series-shunt switch element is particularly advantageous in high average power, 50W, switch applications from 30MHZ – 3GHz. The backside RF, D.C., and thermal I/O ports allow for direct solder re-flow, surface mount, attachment to a micro-strip circuit assembly. The thermal terminal design provides the, power dissipating, series diode a direct connection to the circuit thermal ground for unprecedented heat transfer. The thermal terminal port is electrically isolated from the I/O ports and can be configured as either a reflective or an absorptive switch.
Product Specifications
- Part Number
- MASW-001150-1316
- Description
- HMIC PIN Diode,50W
- Min Frequency(MHz)
- 45
- Max Frequency(MHz)
- 2500
- Insertion Loss (dB)
- 0.300
- Isolation(dB)
- 65
- IIP3(dBm)
- 40
- CW Incident Power(W)
- 50.0
- Package Category
- Die/Bumped Die
- Package
- DIE
- ROHS
- Yes
Features
- Specified Bandwidth: 45MHz—2.5GHz
- RoHS Compliant
- Protective Polymer Scratch Protection
- Silicon Nitride Passivation Protective Polymer
- Rugged Silicon-Glass Construction
- Surface Mount Device (No Wire Bonds)
- Unique Thermal Terminal for Series Diode
- High Input IP3, +66dBm @ 500MHz
- High C.W. Incident Power, 50W at 500MHz
- High isolation >40dB
- Low Loss <0.5dB
- Useable 30MHz to 3.0GHz
Technical Resources
Datasheet
Model Data (Sparameters)
Application Notes
- S-Parameter S2P File Format Guide
- Known Good Die Delivery Specification
- Tape and Reel Packaging for Surface Mount Components
- Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs
- ESD/EOS Protection for GaAs MMIC Switches
- Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
- Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
- Drivers for GaAs FET Switches and Digital Attenuators
- Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
- List of recommended Drivers for MACOM Switches.pdf