MASW-003100-1192

HMIC PIN Diode

The MASW-001100-1190, MASW-002100-1191 and MASW-003100-1192 are broadband monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as 2W, high performance switches in applications up to 26.5GHz. They provide performance levels superior to those realized by hybrid MIC designs incorporating beamlead and PIN chip diodes that require chip and wire assembly. These switches are fabricated using M/A-COM’s patented HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon leads, while gold backside metallization allows for manual or automatic chip bonding via 80/20, AuSn solder or conductive Ag epoxy.

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Product Specifications

Part Number
MASW-003100-1192
Description
HMIC PIN Diode
Min Frequency(MHz)
50
Max Frequency(MHz)
26500
Insertion Loss (dB)
0.300
Isolation(dB)
65
IIP3(dBm)
40
CW Incident Power(W)
2

Features

  • Broad Bandwidth
  • RoHS Compliant
  • Up to +33dBm C.W. Power Handling
  • Glass Encapsulated Construction
  • Fully Monolithic
  • Rugged
  • Lower Insertion Loss / Higher Isolation than pHempt
  • Usable from 50MHz to 26.5GHz
  • Specified from 50MHz to 20GHz

Technical Resources

Datasheet

Model Data (Sparameters)

Application Notes

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MASW-003100-11920G
Diode,Chip,HMIC,SP3T,2Watt
Order Get a Quote Get a Sample
MASW-003100-11920W
Diode,Chip,HMIC,SP3T,2Watt
Order Get a Quote Get a Sample

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