MASW-005102-13600

HMIC™ Silicon PIN Diode Switch with Integrated Bias Network

The MASW-005102-13600 device is a SP5T broadband switch with integrated bias network utilizing M/A-COM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC™ devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy. Yellow areas denote wire bond pads These high performance switches are suitable for use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 80nS switching speeds can be achieved.

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Product Specifications

Part Number
MASW-005102-13600
Description
HMIC™ Silicon PIN Diode Switch with Integrated Bias Network
Min Frequency(MHz)
2000
Max Frequency(MHz)
18000
Insertion Loss (dB)
1.500
Isolation(dB)
45
IIP3(dBm)
40

Features

  • Broad Bandwidth Specified up to 18 GHz
  • Fully Monolithic
  • Rugged, Glass Encapsulated Construction
  • Low Insertion Loss / High Isolation
  • Integrated Bias Network
  • Usable up to 26 GHz

Technical Resources

Datasheet

Application Notes

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MASW-005102-13600W
5T HIMIC SWITCH W/BIAS NETWORK
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