MASW-006102-13610

HMIC™ Silicon PIN Diode Switch with Intergrated Bias Network

The MASW-006102-13610 is a SP6T broadband switch with integrated bias network utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This wafer fabrication process allows the incorporation of silicon pedestals that form series and shunt diodes and vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, plus the combination of silicon and glass gives this HMIC™ device low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbons or 1 mil wire while full backside gold metallization allows for die attachment using 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy. The MASW-006102-13160 is a high performance switch which is suitable for use in multi-band ECM, radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 80nS switching speeds can be achieved.

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Product Specifications

Part Number
MASW-006102-13610
Description
HMIC™ Silicon PIN Diode Switch with Intergrated Bias Network
Min Frequency(MHz)
2000
Max Frequency(MHz)
18000
Insertion Loss (dB)
0.300
Isolation(dB)
65
IIP3(dBm)
40
CW Incident Power(W)
2
Package Category
Die/Bumped Die
Package
DIE

Features

  • Broad Bandwidth 2 to 18 GHz
  • RoHS Compliant
  • Fully Monolithic
  • Rugged, Glass Encapsulated Construction
  • Low Insertion Loss / High Isolation
  • Integrated Bias Network
  • Usable up to 26 GHz

Technical Resources

Datasheet

Application Notes

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MASW-006102-13610W
6T HMIC SWITCH W/BIAS NETWORK
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