MASW-007587-000000
GaAs Broadband
MACOM’s MASW-007587 is a broadband GaAs pHEMT MMIC diversity switch available in a leadfree 3 mm 12-lead PQFN package. The MASW-007587 is ideally suited for applications where very small size and high linear power are required. Typical applications include 2.5 & 3.5 GHz WiMax, WLAN MESH networks, fixed wireless access, and other higher power systems. Designed for high power, this DPDT switch maintains high linearity up to 4.0 GHz. The MASW-007587 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability.
Product Specifications
- Part Number
- MASW-007587-000000
- Description
- GaAs Broadband
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 4000
- Insertion Loss (dB)
- 0.700
- Isolation(dB)
- 38
- IIP3(dBm)
- 59
- IP1dB(dBm)
- 36
- Package Category
- Plastic Surface Mount
- Package
- 3mm PQFN-12LD
- ROHS
- Yes
Features
- Ideal for High Power Diversity Switch Applications including WiMax, WLAN MESH Networks, and Fixed Wireless Access
- RoHS* Compliant
- 260°C Reflow Compatible
- Halogen-Free “Green” Mold Compound
- 100% Matte Tin Plating over Copper
- Lead-Free 3 mm 12-Lead PQFN Package
- Fast Settling for Low Gate Lag Requirements
- High P1dB Compression: 39.5 dBm @ 5 V
- Low Insertion Loss: 0.8 dB @ 2.5 GHz and 1.2 dB @ 3.5 GHz
- Broadband Performance: DC - 4.0 GHz
Technical Resources
Datasheet
Model Data (Sparameters)
Application Notes
- S-Parameter S2P File Format Guide
- Tape and Reel Packaging for Surface Mount Components
- Moisture Effects on the Soldering of Plastic Encapsulated Devices
- Surface Mounting Instructions for PQFN Packages
- Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
- Drivers for GaAs FET Switches and Digital Attenuators
- Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches