MASW-011021

HMIC™ Silicon PIN Diode SPDT Switch

This device is a Surmount™ X-Band monolithic SPDT switch designed for high power, high performance applications. This Surface Mount chipscale configuration is designed with minimal parasitics usually associated with hybrid MIC designs incorporating beam lead and/or bondable PIN diodes that require chip and wire assembly. This device is fabricated using MACOM's patented HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes and/or vias by embedding them in low loss, low dispersion glass. Selective backside metalization is applied producing a surface mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode airbridge during handling and assembly.

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Product Specifications

Part Number
MASW-011021
Description
HMIC™ Silicon PIN Diode SPDT Switch
Min Frequency(MHz)
6000
Max Frequency(MHz)
14000
Isolation(dB)
34
Insertion Loss (dB)
0.700
IIP3(dBm)
60
CW Incident Power(W)
10.0
Package Category
Die/Bumped Die
Package
Surmount Die
ROHS
Yes

Features

  • Specified from 8 GHz to 12 GHz
  • Polymer Scratch Protection
  • Silicon Nitride Passivation
  • 20 W Pulsed Power Handling5
  • Glass Encapsulated Construction
  • Surface Mountable, Fully Monolithic Die
  • Low Parasitic Capacitance and Inductance
  • High Isolation
  • Low Insertion Loss
  • RoHS* Compliant

Technical Resources

Datasheet

Model Data (Sparameters)

Application Notes

Order from MACOM

MASW-011021-001SMB
Switch,SPDT,8-12GHz
Order Get a Quote Get a Sample
MASW-011021-14010G
Switch,Hmic,SPDT,8-12GHz
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