MASW-011021
HMIC™ Silicon PIN Diode SPDT Switch
This device is a Surmount™ X-Band monolithic SPDT switch designed for high power, high performance applications. This Surface Mount chipscale configuration is designed with minimal parasitics usually associated with hybrid MIC designs incorporating beam lead and/or bondable PIN diodes that require chip and wire assembly. This device is fabricated using MACOM's patented HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes and/or vias by embedding them in low loss, low dispersion glass. Selective backside metalization is applied producing a surface mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode airbridge during handling and assembly.
Product Specifications
- Part Number
- MASW-011021
- Description
- HMIC™ Silicon PIN Diode SPDT Switch
- Min Frequency(MHz)
- 6000
- Max Frequency(MHz)
- 14000
- Isolation(dB)
- 34
- Insertion Loss (dB)
- 0.700
- IIP3(dBm)
- 60
- CW Incident Power(W)
- 10.0
Features
- Specified from 8 GHz to 12 GHz
- Polymer Scratch Protection
- Silicon Nitride Passivation
- 20 W Pulsed Power Handling5
- Glass Encapsulated Construction
- Surface Mountable, Fully Monolithic Die
- Low Parasitic Capacitance and Inductance
- High Isolation
- Low Insertion Loss
- RoHS* Compliant
Technical Resources
Datasheet
Model Data (Sparameters)
Application Notes
- S-Parameter S2P File Format Guide
- Known Good Die Delivery Specification
- Bonding, Handling, and Mounting Procedures for Chip Diode Devices
- Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
- Drivers for GaAs FET Switches and Digital Attenuators
- Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
- List of recommended Drivers for MACOM Switches.pdf