MASW4060G
GaAs
MACOM's MASW4060G is an SP4T absorptive or reflective GaAs MESFET MMIC. This part combines small size, low insertion loss and power consumption with high isolation. Ideal for many applications and module use. It will function well for designs below 4.0 GHz. The MASW4060G is fabricated using a mature 1-micron gate length GaAs MESFET process. The process features full chip passivation for increased performance and reliability.
Product Specifications
- Part Number
- MASW4060G
- Description
- GaAs
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 4000
- Insertion Loss (dB)
- 1.300
- Isolation(dB)
- 50
- IIP3(dBm)
- 46
- Package Category
- Die/Bumped Die
- Package
- DIE
- ROHS
- Yes
Features
- Low Insertion Loss: 1.2 dB (Typ.)
- RoHS* Compliant
- Terminated Option
- Ultra Low DC Power Consumption
- Fast Switching Speed: 4 nS (Typ.)
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Known Good Die Delivery Specification
- Tape and Reel Packaging for Surface Mount Components
- Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs
- ESD/EOS Protection for GaAs MMIC Switches
- Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
- Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
- Drivers for GaAs FET Switches and Digital Attenuators
- Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches