MASWSS0130
GaAs Broadband
MACOM’s MASWSS0130 is a broadband GaAs PHEMT MMIC DPDT diversity switch in a low cost, lead-free 3 mm 12-lead PQFN plastic package. The MASWSS0130 is ideally suited for applications where very small size and low cost are required. Typical applications are for WLAN IEEE 802.11b/g systems that employ two antennas for transmit and receive diversity. Designed for high power, this DPDT switch is optimized for high linearity at 2.4 GHz. The MASWSS0130 is fabricated using a 0.5 micron gate length GaAs pHEMT process. The process features full passivation for performance and reliability.
Product Specifications
- Part Number
- MASWSS0130
- Description
- GaAs Broadband
- Min Frequency(MHz)
- 500
- Max Frequency(MHz)
- 3000
- Insertion Loss (dB)
- 0.600
- Isolation(dB)
- 25
- IIP3(dBm)
- 55
- IP1dB(dBm)
- 34
- Package Category
- Plastic Surface Mount
- Package
- 3mm PQFN-12LD
- ROHS
- Yes
Features
- Ideal for 802.11 b/g Applications
- Halogen-Free “Green” Mold Compound
- 100% Matte Tin Plating over Copper
- Lead-Free 3 mm 12-Lead PQFN Package
- High P1dB: 34 dBm @ 3 V
- Fast Switching Speed: 0.5 µm GaAs pHEMT Process
- High Isolation: 25 dB @ 2.4 GHz
- Low Insertion Loss: 0.6 dB @ 2.4 GHz
- Broadband Performance: 0.5 - 3.0 GHz
- RoHS* Compliant
- 260°C Reflow Compatible
Technical Resources
Datasheet
Model Data (Sparameters)
Application Notes
- S-Parameter S2P File Format Guide
- Tape and Reel Packaging for Surface Mount Components
- Moisture Effects on the Soldering of Plastic Encapsulated Devices
- Surface Mounting Instructions for PQFN Packages
- Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
- Drivers for GaAs FET Switches and Digital Attenuators
- Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches