MAVR-000120-14110G
GaAs Hyperabrupt
MACOM’s MAVR-000120-1411 is a gallium arsenide flip chip hyperabrupt varactor diode. This device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. This diode is fully passivated with silicon nitride and has an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion.
Product Specifications
- Part Number
- MAVR-000120-14110G
- Description
- GaAs Hyperabrupt
- Gamma
- 1.00
- Total Capacitance(pF)
- 0.350
- Quality Factor @ 50 MHz, Min
- 3000
- Breakdown Voltage(V)
- 20
- Package
- Flip Chip DIE
- Package Category
- Solderable Surface Mount Die
Features
- Usable Past 70GHz
- Can be Mounted with Solder or Conductive Epoxy
- Can withstand 500 Temperature Cycles (-65 Deg.C. to +150 Deg.C), mounted with 96.5Sn/3.5Ag solder without Mechanical Degradation
- Available in Pocket Tape and Reel
- Lead Free (RoHs Compliant)
- Surface Mount Configuration
- Polyimide Scratch Protection
- Silicon Nitride Passivation
- High Q
- Low Parasitic Capacitance
- Constant Gamma for Linear Tuning