MMD805-C12
Silicon Step Recovery Diodes
The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picoseconds pulse forming.
Product Specifications
- Part Number
- MMD805-C12
- Description
- Silicon Step Recovery Diodes
- Lifetime(ns)
- 100
- Reverse Voltage, Min(V)
- 60
- Tt(pS)
- 250
- Total Capacitance Min (pF)(pF)
- 2.50
- Total Capacitance Max (pF)(pF)
- 3.50
- Package Category
- Chip
Features
- Output Combs to 40+ GHz
- Transition Times down to 35 ps
- Screening per MIL-PRF-19500 and MIL-PRF-38534 available