MMDB30-B11
Silicon Step Recovery Diodes
The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming.
Product Specifications
- Part Number
- MMDB30-B11
- Description
- Silicon Step Recovery Diodes
- Lifetime(ns)
- 4
- Reverse Voltage, Min(V)
- 14
- Tt(pS)
- 0
- Total Capacitance Min (pF)(pF)
- 0.15
- Total Capacitance Max (pF)(pF)
- 0.25
Features
- Output combs to 40+ GHz
- Screening per MIL-PRF-19500 and MIL-PRF-38534 available
- Transition times down to 35 ps